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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE2801T DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO = 60V(Min) *High DC Current Gain: hFE= 25-100@IC= 3A *Complement to Type MJE2901T APPLICATIONS *Designed for use as an output device in complementary audio amplifiers up to 35 watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 60 60 4 10 5 75 150 -55~150 UNIT V V V A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.67 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJE2801T TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 200mA; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A B 1.1 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 2V VCB= 60V; IE= 0 VCB= 60V; IE= 0;TC= 150 VEB= 4V; IC=0 1.4 0.1 2.0 1.0 V ICBO Collector Cutoff Current mA IEBO Emitter Cutoff Current mA hFE DC Current Gain IC= 3A ; VCE= 2V 25 100 isc Websitewww.iscsemi.cn 2 |
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